Silicon on Insulator

Silicon on Insulator (SOI) is a type of material technology which can be utilised in the manufacture of pressure sensor diaphragms to allow operation at higher temperatures.

Silicon on insulator (SOI) wafers are most common in microelectromechanical systems (MEMS) and advanced complementary metal–oxide–semiconductor (CMOS) integrated circuit 
fabrications. Silicon on insulator wafers improve many of the processes that more traditional silicon wafers are used in.

These wafers provide a manufacturing solution which helps reduce power and heat while increasing the speed performance of a device. SOI chips can be as much as 15 percent faster and use 20 percent less power than today's bulk complementary metal-oxide semiconductor (CMOS)-based chips.

Silicon on insulator wafers are a three layer material stack composed of the following: an active layer of prime quality silicon (device layer), a buried oxide layer (box) of electrically insulating silicon dioxide, and a bulk silicon support wafer (handle). SOI wafers are unique products for specific end-user applications.